gan wideband transistor 28 v, 4 w dc - 6 ghz rev. v1 magx - 011086 1 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support * restrictions on hazardous substances, european union directive 2011/65/eu. ordering information part number package magx - 011086 bulk quantity magx - 011086 - smbppr sample board ? gan on si hemt d - mode transistor ? suitable for linear and saturated applications ? tunable from dc - 6 ghz ? 28 v operation ? 9 db gain at 5.8 ghz ? 45% drain efficiency at 5.8 ghz ? 100% rf tested ? thermally - enhanced 4 mm 24 - lead qfn ? rohs* compliant description the magx - 011086 gan hemt is a wideband transistor optimized for dc - 6 ghz operation in a user friendly package ideal for high bandwidth applications. the device has been designed for saturated and linear operation with output power levels of 4 w (36 dbm) in an industry standard, low inductance, surface mount qfn package. the pads of the package form a coplanar launch that naturally absorbs lead parasitics and features a small pcb outline for space constrained applications. the magx - 011086 is ideally suited for wireless lan, high dynamic range lnas, broadband general purpose, land mobile radio, defense communications, wireless infrastructure, and ism applications. built using the sigantic? process - a proprietary gan - on - silicon technology. pin configuration 1 functional schematic pin no. pin name function 1 - 2 n/c no connection 3 - 4 rf in / v g rf input / gate 5 - 14 n/c no connection 15 - 16 rf out / v d rf output / drain 17 - 24 n/c no connection 25 paddle 2 ground / source 1. all no connection pins may be left floating or grounded. 2. the exposed pad centered on the package bottom must be connected to rf and dc ground and provide a low thermal resistance heat path. features n / c input match rf in / v g rf in / v g n / c n / c n / c 12 11 10 9 8 7 6 5 4 3 2 1 n / c rf out / v d rf out / v d n / c n / c n / c 13 14 15 16 17 18 n / c n / c n / c n / c n / c n / c 19 20 21 22 23 24 n / c n / c n / c n / c n / c n / c 25 paddle
gan wideband transistor 28 v, 4 w dc - 6 ghz rev. v1 magx - 011086 2 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rf electrical specifications: t a = 25 ? ds = 28 v, i dq = 50 ma parameter test conditions symbol min. typ. max. units small signal gain cw, 5.8 ghz g ss - 11 - db saturated output power cw, 5.8 ghz p sat - 37 - dbm drain efficiency at saturation cw, 5.8 ghz h sat - 50 - % power gain 5.8 ghz, p out = 4 w g p 8 9 - db drain efficiency 5.8 ghz, p out = 4 w h 40 45 - % ruggedness: output mismatch all phase angles y vswr = 10:1, no device damage dc electrical characteristics: t a = 25 ? parameter test conditions symbol min. typ. max. units drain - source leakage current v gs = - 8 v, v ds = 100 v i dlk - - 2 ma gate - source leakage current v gs = - 8 v, v ds = 0 v i glk - - 1 ma gate threshold voltage v ds = +28 v, i d = 2 ma v t - 2.5 - 1.5 - 0.5 v gate quiescent voltage v ds = +28 v, i d = 50 ma v gsq - 2.1 - 1.2 - 0.3 v on resistance v ds = +2 v, i d = 15 ma r on - 2.0 - w saturated drain current v ds = 7 v, pulse width 300 s i d(sat) - 1.4 - a
gan wideband transistor 28 v, 4 w dc - 6 ghz rev. v1 magx - 011086 3 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support parameter absolute max. drain - source voltage, v ds 100 v gate - source voltage, v gs - 10 v to 3 v gate current, i g 4 ma junction temperature, t j +200c operating temperature - 40c to +85c storage temperature - 65c to +150c absolute maximum ratings 3,4, 5 3. exceeding any one or combination of these limits may cause permanent damage to this device. 4. macom does not recommend sustained operation near these survivability limits. 5. operating at nominal conditions with t j 200c will ensure mttf > 1 x 10 6 hours. handling procedures please observe the following precautions to avoid damage: static sensitivity gallium nitride integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these class 1a devices. thermal characteristics 6, 7 parameter test conditions symbol typ. units thermal resistance v ds = 28 v, t j = 200c ? jc 12.5 c/w 6. junction temperature (t j ) measured using ir microscopy. case temperature measured using thermocouple embedded in heat - sink. 7. the thermal resistance of the mounting configuration must be added to the device ? jc , for proper t j calcula- tion during operation. the recommended via pattern, shown on page 6, on a 20 mil thick, 1oz plated copper, pcb contributes an additional 6.6 c/w to the typical value.
gan wideband transistor 28 v, 4 w dc - 6 ghz rev. v1 magx - 011086 4 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support load - pull performance: v ds = 28 v, i dq = 50 ma, t a = 25c reference plane at device leads, cw drain efficiency and output power tradeoff impedance frequency (mhz) z s (w) z l (w) p sat (w) g ss (db) drain efficiency @ p sat (%) 900 4.0 + j8.4 31.9 + j41.2 5.8 24.6 65 2500 4.0 - j13.1 12.5 + j18.0 5.1 19.5 63 3500 6.8 - j26.8 10.1 + j9.3 5.0 16.0 57 4000 13.4 - j37.8 9.5 + j4.7 5.0 15.3 56 5000 67.4 - j33.2 8.2 + j1.2 5.0 13.8 55 5800 19.4 + j0.5 7.7 - j8.4 5.0 12.0 55 impedance reference z s and z l vs. frequency z s z l
gan wideband transistor 28 v, 4 w dc - 6 ghz rev. v1 magx - 011086 5 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support load - pull performance: v ds = 28 v, i dq = 50 ma, t a = 25c reference plane at device leads, cw drain efficiency and output power tradeoff impedance gain vs. output power drain efficiency vs. output power gain vs. output power drain efficiency vs. output power 10 15 20 25 30 20 25 30 35 40 900 mhz 2500 mhz 3500 mhz gain (db) output power (dbm) 0 10 20 30 40 50 60 70 20 25 30 35 40 900 mhz 2500 mhz 3500 mhz drain efficiency (%) output power (dbm) 0 10 20 30 40 50 60 70 20 25 30 35 40 4000 mhz 5000 mhz 5800 mhz drain efficiency (%) output power (dbm) 5 10 15 20 20 25 30 35 40 4000 mhz 5000 mhz 5800 mhz gain (db) output power (dbm)
gan wideband transistor 28 v, 4 w dc - 6 ghz rev. v1 magx - 011086 6 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support evaluation board and recommended tuning solution 5.8 ghz narrowband circuit parts measured on evaluation board (20 - mil thick ro4350). the pcbs electrical and thermal ground is provided using a standard - plated densely packed via hole array (see recommended via pattern). matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. recommended tuning solution component placement, transmission lines, and details are shown on the next page. description turning the device on 1. set v gs beyond pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage (28 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs . bias sequencing recommended via pattern (all dimensions shown as inches) c 15 1 . 2 pf c 4 1000 pf c 3 0 . 01 m c 2 0 . 1 m 1 . 0 m v gs v ds c 16 3 . 3 pf rf out magx - 011086 c 5 1 . 0 m m m rf in c 9 4 . 7 pf c 10 3 . 3 pf c 11 3 . 3 pf r 1 200 w c 12 3 . 3 pf c 13 0 . 2 pf
gan wideband transistor 28 v, 4 w dc - 6 ghz rev. v1 magx - 011086 7 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support reference value tolerance manufacturer part number c1, c5 1.0 f 10 % avx 12101c105kat2a c2, c6 0.1 f 10 % kemet c1206c104k1ractu c3, c7 0.01 f 10 % avx 12061c103kat2a c4, c8 1000 pf 10 % kemet c0805c102k1ractu c9 4.7 pf 0.1 pf atc atc800a4r7b250 c10, c11, c12, c16 3.3 pf 0.1 pf atc atc800a3r3b250 c13 0.2 pf 0.1 pf atc atc800a0r2b250 c14 0.5 pf 0.1 pf atc atc800a0r5b250 c15 1.2 pf 0.1 pf atc atc800a1r2b250 c17 0.3 pf 0.1 pf atc atc800a0r3b250 r1 200 ? 1 % panasonic erj - 6enf2000v rf connector sma amphenol - connex 132150 dc connector d - subminiature erni 284525 pcb ro4350 rogers corp evaluation board and recommended tuning solution 5.8 ghz narrowband circuit parts list
gan wideband transistor 28 v, 4 w dc - 6 ghz rev. v1 magx - 011086 8 8 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support typical performance as measured in the 5.8 ghz evaluation board: cw, v ds = 28 v, i dq = 50 ma (unless noted) gain vs. output power over temperature drain efficiency vs. output power over temperature quiescent v gs vs. temperature 2 4 6 8 10 12 14 15 20 25 30 35 40 +25c -40c +85c gain (db) output power (dbm) 0 10 20 30 40 50 15 20 25 30 35 40 +25c -40c +85c drain efficiency (%) output power (dbm) -1.6 -1.5 -1.4 -1.3 -1.2 -1.1 -1.0 -50 -25 0 25 50 75 100 25 ma 50 ma 75 ma v gsq (v) temperature (c)
gan wideband transistor 28 v, 4 w dc - 6 ghz rev. v1 magx - 011086 9 9 9 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2 - tone imd vs. output power 2 - tone imd3 vs. output power vs. quiescent current 2 - tone gain vs. output power vs. quiescent current typical 2 - tone performance as measured in the 5.8 ghz evaluation board: 1 mhz tone spacing, v ds = 28 v, i dq = 50 ma, t a = 25c (unless noted) -60 -50 -40 -30 -20 -10 0.1 1 10 -imd3 +imd3 -imd5 +imd5 -imd7 +imd7 imd (dbc) p out (w-pep) 7 8 9 10 11 12 0.1 1 10 13ma 25ma 38ma 50ma 75ma gain (db) p out (w-pep) -45 -40 -35 -30 -25 -20 -15 -10 0.1 1 10 13ma 25ma 38ma 50ma 75ma imd (dbc) p out (w-pep)
gan wideband transistor 28 v, 4 w dc - 6 ghz rev. v1 magx - 011086 10 10 10 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support lead free 4 mm 24 lead qfn plastic package ? ? meets jedec moisture sensitivity level 3 requirements. plating is matte sn all dimensions shown as inches [millimeters]
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